@inproceedings{0b51139517fb4e038650b219c6274405,
title = "Monolithic displacement encoder sensor integrating GaN LED and Si photodiodes",
abstract = "A GaN blue light emitting diode (LED) and Si photodiodes (PDs) are integrated monolithically on Si substrate for a micro optical displacement encoder sensor. A GaN-LED crystal layer was grown epitaxially on a Si substrate. Si pn-junction was formed subsequently on the Si substrate by P ion implantation. Therefore, all components necessary for the encoder sensor are integrated on a Si chip after patterning encoder gratings. The blue light is useful for improving diffraction effect and suitable for Si photodetector.",
keywords = "Displacement Sensor, GaN-LED, MEMS Fabrication, Monolithic Integration",
author = "S. Nagai and T. Sasaki and H. Kawaguchi and A. Iwabuchi and K. Hane",
year = "2013",
doi = "10.1109/Transducers.2013.6626931",
language = "English",
isbn = "9781467359818",
series = "2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013",
pages = "972--975",
booktitle = "2013 Transducers and Eurosensors XXVII",
note = "2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 ; Conference date: 16-06-2013 Through 20-06-2013",
}