TY - JOUR
T1 - Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
AU - Matsuo, Nozomu
AU - Ohno, Hideo
AU - Hasegawa, Hideki
PY - 1984/8
Y1 - 1984/8
N2 - In order to realize high speed, crosstalk-free interconnections with high noise immunity for very high speed IC's and systems, GaAs integrated photoconductive detector/FET receivers with a distributed coupling to optical fibers are developed. The distributed coupling enables a quick and simple connection between the integrated receiver and an optical fiber, with relatively low connection loss of -1.4 dB. The integrated receivers show response of 5 ns rise time for a 0.85 µm light pulse, which is limited by the surface effect of the detector.
AB - In order to realize high speed, crosstalk-free interconnections with high noise immunity for very high speed IC's and systems, GaAs integrated photoconductive detector/FET receivers with a distributed coupling to optical fibers are developed. The distributed coupling enables a quick and simple connection between the integrated receiver and an optical fiber, with relatively low connection loss of -1.4 dB. The integrated receivers show response of 5 ns rise time for a 0.85 µm light pulse, which is limited by the surface effect of the detector.
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U2 - 10.1143/JJAP.23.L648
DO - 10.1143/JJAP.23.L648
M3 - Article
AN - SCOPUS:19244368215
SN - 0021-4922
VL - 23
SP - L648-L650
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8
ER -