Morphological change of Co-nanodot on SiO2 by thermal treatment

Koji Ueda; Taizoh Sadoh; Atsushi Kenjo; Fumiya Shoji; Kaoru Sato; Hiroyuki Kurino; Mitsumasa Koyanagi; Masanobu Miyao

doi:10.1016/j.tsf.2005.10.005

Morphological change of Co-nanodot on SiO₂ by thermal treatment

Koji Ueda, Taizoh Sadoh, Atsushi Kenjo, Fumiya Shoji, Kaoru Sato, Hiroyuki Kurino, Mitsumasa Koyanagi, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Abstract

Morphological changes of Co nanodots on SiO₂ layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO₂ layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.

Original language	English
Pages (from-to)	178-181
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.10.005
Publication status	Published - 2006 Jun 5
Externally published	Yes

Keywords

Molecular beam deposition
Nanodot
Nonvolatile memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.10.005

Cite this

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title = "Morphological change of Co-nanodot on SiO2 by thermal treatment",

abstract = "Morphological changes of Co nanodots on SiO2 layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO2 layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.",

keywords = "Molecular beam deposition, Nanodot, Nonvolatile memory",

author = "Koji Ueda and Taizoh Sadoh and Atsushi Kenjo and Fumiya Shoji and Kaoru Sato and Hiroyuki Kurino and Mitsumasa Koyanagi and Masanobu Miyao",

note = "Funding Information: The authors would like to thank Mr. M. Shioga of JFE Techno-Research Corporation for SEM observations and Mr. T. Enokida of Fukuryo Semicon Engineering Corporation for TEM observations. A part of this work was supported by the CREST of the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2006",

month = jun,

day = "5",

doi = "10.1016/j.tsf.2005.10.005",

language = "English",

volume = "508",

pages = "178--181",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Morphological change of Co-nanodot on SiO2 by thermal treatment

AU - Ueda, Koji

AU - Sadoh, Taizoh

AU - Kenjo, Atsushi

AU - Shoji, Fumiya

AU - Sato, Kaoru

AU - Kurino, Hiroyuki

AU - Koyanagi, Mitsumasa

AU - Miyao, Masanobu

N1 - Funding Information: The authors would like to thank Mr. M. Shioga of JFE Techno-Research Corporation for SEM observations and Mr. T. Enokida of Fukuryo Semicon Engineering Corporation for TEM observations. A part of this work was supported by the CREST of the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - Morphological changes of Co nanodots on SiO2 layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO2 layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.

AB - Morphological changes of Co nanodots on SiO2 layers by thermal treatment have been investigated. Co nanodots were formed by molecular beam deposition of Co on SiO2 layers with substrate temperatures (30-600 °C) and subsequent post-annealing (500-800 °C). For samples deposited at low temperatures (30-280 °C), the diameter and the density of nanodots increased and decreased, respectively, with increasing post-annealing temperature. On the other hand, the diameter and the density of nanodots scarcely changed by post-annealing for samples deposited at high temperatures (430-600 °C). These morphological changes by the post-annealing can be explained on the basis of the stress relaxation in the deposited Co films.

KW - Molecular beam deposition

KW - Nanodot

KW - Nonvolatile memory

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