MOS interface characterization by cross-sectional STM

Tadahiro Komeda, S. Gwo, Hiroshi Tokumoto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The application of the cross-sectional scanning tunneling microscope (XSTM) to the interface observation of metal-oxide-semiconductor (MOS) structure formed on Si(111) was described. The STM images revealed the morphology of the MOS interface region where the cleaved Si part showed a novel reconstructed structure of Si(111)-8 × 1 and the metal (Au) layer of ∼ 10 nm higher from the Si portion was fractured during the cleaving process. Scanning tunneling spectroscopy (STS) measurement on the Si part showed systematic shifts of the spectra with the application of the bias voltages between the metal and the Si, which agreed well with the expected band bending in the Si qualitatively.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalSurface Science
Publication statusPublished - 1996 Jun 20


  • Low index single crystal surfaces
  • Metal-semiconductor interfaces
  • Scanning tunneling spectroscopies
  • Silicon
  • Silicon oxides
  • Surface electronic phenomena
  • Surface structure, morphology, roughness, and topography


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