MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition

Y. Pei, C. Yin, J. C. Bea, H. Kino, T. Fukushima, T. Tanaka, M. Koyanagi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistor (MOSFET) nonvolatile memories with high-density tungsten nanodots (W-NDs) dispersed in silicon nitride as a floating gate were fabricated and characterized. The W-NDs with a high density of ∼5 × 1012 cm-2 and small sizes of 2-3 nm were formed by self-assembled nanodot deposition (SAND). A large memory window of ∼1.7 V was observed with bi-directional gate voltage sweeping between -10 and +10 V. Considering that there is no hysteresis memory window for the reference sample without W-NDs, this result indicates the charge trapping in W-NDs or related defects. Finally, the program/erase speed and retention characteristics were investigated and discussed in this paper.

Original languageEnglish
Article number045022
JournalSemiconductor Science and Technology
Volume24
Issue number4
DOIs
Publication statusPublished - 2009

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