Abstract
Fast Atom Beam processing methods e. g. etching and sputter deposition are easily applicable to isolation materials because charge up does not occur in the process. A fast beam processing method has been applied to sputter deposition, and is called Fast Atom Bombardment Sputter Deposition. In this work, a new chemical composition control method for MoSx deposited film has been studied using a Mo-S complex target developed by the authors. Moreover, crystalline and friction characteristics of film obtained using this method are examined.
| Original language | English |
|---|---|
| Pages | 977-982 |
| Number of pages | 6 |
| Publication status | Published - 1983 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)