MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Highly luminescent In0.528Ga0.472P 1-yNy layers (y=0-0.027) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy. The dependence of photoluminescence (PL) properties on the N content in In0.528Ga 0.472P1-yNy layers was investigated. Near-band edge emissions were obviously observed up to room temperature. With increasing temperature, the PL peak energy exhibits an inverted S-shape, which explained by the strong localization of carriers at low-temperatures, while the band-to-band transition becomes dominant at higher temperatures. With incorporation of N into In0.528Ga0.472P, the bandgap at 10 K is red-shifted as large as 110 meV for the highest N-containing layer (y=0.027), indicating a large bandgap bowing. Further, the temperature dependence of the bandgap energy becomes significantly weak with increasing N content. Our results suggest that the density of states around the band edge of In0.528Ga 0.472P1-yNy is modified from that of In 0.528Ga0.472P due to the localized states possibly induced by the presence of N.

Original languageEnglish
Pages (from-to)2079-2081
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-8
Publication statusPublished - 2010 Aug 26
Event8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of
Duration: 2009 Oct 182009 Oct 23


  • Band gap
  • InGaPN
  • Localization
  • Photoluminescence

ASJC Scopus subject areas

  • Condensed Matter Physics


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