MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Highly luminescent In_0.528Ga_0.472P _1-yN_y layers (y=0-0.027) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy. The dependence of photoluminescence (PL) properties on the N content in In_0.528Ga _0.472P_1-yN_y layers was investigated. Near-band edge emissions were obviously observed up to room temperature. With increasing temperature, the PL peak energy exhibits an inverted S-shape, which explained by the strong localization of carriers at low-temperatures, while the band-to-band transition becomes dominant at higher temperatures. With incorporation of N into In_0.528Ga_0.472P, the bandgap at 10 K is red-shifted as large as 110 meV for the highest N-containing layer (y=0.027), indicating a large bandgap bowing. Further, the temperature dependence of the bandgap energy becomes significantly weak with increasing N content. Our results suggest that the density of states around the band edge of In_0.528Ga _0.472P_1-yN_y is modified from that of In _0.528Ga_0.472P due to the localized states possibly induced by the presence of N.