MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka; K. Saito; K. Takanashi; H. Fujimori

doi:10.1109/intmag.1999.837543

MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka, K. Saito, K. Takanashi, H. Fujimori

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

Original language	English
Pages (from-to)	EC-04
Journal	Digests of the Intermag Conference
DOIs	https://doi.org/10.1109/intmag.1999.837543
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea Duration: 1999 May 18 → 1999 May 21

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/intmag.1999.837543

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@article{aa66a5e57d3b42139031bd91f5da69f2,

title = "MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode",

abstract = "In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.",

author = "H. Yamanaka and K. Saito and K. Takanashi and H. Fujimori",

year = "1999",

doi = "10.1109/intmag.1999.837543",

language = "English",

pages = "EC--04",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' ; Conference date: 18-05-1999 Through 21-05-1999",

}

TY - JOUR

T1 - MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

AU - Yamanaka, H.

AU - Saito, K.

AU - Takanashi, K.

AU - Fujimori, H.

PY - 1999

Y1 - 1999

N2 - In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

AB - In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

UR - http://www.scopus.com/inward/record.url?scp=0033299789&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033299789&partnerID=8YFLogxK

U2 - 10.1109/intmag.1999.837543

DO - 10.1109/intmag.1999.837543

M3 - Conference article

AN - SCOPUS:0033299789

SN - 0074-6843

SP - EC-04

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99'

Y2 - 18 May 1999 through 21 May 1999

ER -

MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

Abstract

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