MTJ/MOS-hybrid logic-circuit design flow for nonvolatile logic-in-memory LSI

Masanori Natsui, Takahiro Hanyu, Noboru Sakimura, Tadahiko Sugibayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A cell-based design flow for MTJ/MOS-hybrid logic circuits is presented towards the realization of practical-scale logic LSI based on nonvolatile logic-in-memory architecture. Newly-developed supplementary design tools including a precise MTJ device model enable to design MTJ/MOS-hybrid logic's intellectual properties (IPs) accurately. By the use of the IPs, various pattern layouts of the MOS and MTJ/MOS-hybrid logic-circuit cells can be automatically synthesized. The effectiveness of the proposed design flow is demonstrated through typical arithmetic-circuit design examples with a nonvolatile storage capability.

Original languageEnglish
Title of host publication2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Pages105-108
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 - Beijing, China
Duration: 2013 May 192013 May 23

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Country/TerritoryChina
CityBeijing
Period13/5/1913/5/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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