Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process

Takeshi Matsumura; Masayoshi Esashi; Hiroshi Harada; Shuji Tanaka

doi:10.1109/ULTSYM.2009.5442012

Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process

Takeshi Matsumura, Masayoshi Esashi, Hiroshi Harada, Shuji Tanaka

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.

Original language	English
Title of host publication	2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2141-2144
Number of pages	4
ISBN (Print)	9781424443895
DOIs	https://doi.org/10.1109/ULTSYM.2009.5442012
Publication status	Published - 2009
Event	2009 IEEE International Ultrasonics Symposium, IUS 2009 - Rome, Italy Duration: 2009 Sept 20 → 2009 Sept 23

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Conference

Conference	2009 IEEE International Ultrasonics Symposium, IUS 2009
Country/Territory	Italy
City	Rome
Period	09/9/20 → 09/9/23

Keywords

CMOS-MEMS
Disk-type resonator
FBAR
Multi-band filter
RF MEMS

Access to Document

10.1109/ULTSYM.2009.5442012

Cite this

Matsumura, T., Esashi, M., Harada, H., & Tanaka, S. (2009). Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process. In 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009 (pp. 2141-2144). Article 5442012 (Proceedings - IEEE Ultrasonics Symposium). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULTSYM.2009.5442012

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title = "Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process",

abstract = "A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.",

keywords = "CMOS-MEMS, Disk-type resonator, FBAR, Multi-band filter, RF MEMS",

author = "Takeshi Matsumura and Masayoshi Esashi and Hiroshi Harada and Shuji Tanaka",

year = "2009",

doi = "10.1109/ULTSYM.2009.5442012",

language = "English",

isbn = "9781424443895",

series = "Proceedings - IEEE Ultrasonics Symposium",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2141--2144",

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note = "2009 IEEE International Ultrasonics Symposium, IUS 2009 ; Conference date: 20-09-2009 Through 23-09-2009",

}

Matsumura, T, Esashi, M, Harada, H & Tanaka, S 2009, Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process. in 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009., 5442012, Proceedings - IEEE Ultrasonics Symposium, Institute of Electrical and Electronics Engineers Inc., pp. 2141-2144, 2009 IEEE International Ultrasonics Symposium, IUS 2009, Rome, Italy, 09/9/20. https://doi.org/10.1109/ULTSYM.2009.5442012

Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process. / Matsumura, Takeshi; Esashi, Masayoshi; Harada, Hiroshi et al.
2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009. Institute of Electrical and Electronics Engineers Inc., 2009. p. 2141-2144 5442012 (Proceedings - IEEE Ultrasonics Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Matsumura, Takeshi

AU - Esashi, Masayoshi

AU - Harada, Hiroshi

AU - Tanaka, Shuji

PY - 2009

Y1 - 2009

N2 - A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.

AB - A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and disk-type resonators, were co-fabricated on a dummy Si wafer. A ladder-type FBAR filter with a center frequency of 7.71 GHz and a mechanically-coupled disk-array filter with a center frequency of 292.8 MHz were also prototyped and characterized.

KW - CMOS-MEMS

KW - Disk-type resonator

KW - FBAR

KW - Multi-band filter

KW - RF MEMS

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Matsumura T, Esashi M, Harada H, Tanaka S. Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process. In 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009. Institute of Electrical and Electronics Engineers Inc. 2009. p. 2141-2144. 5442012. (Proceedings - IEEE Ultrasonics Symposium). doi: 10.1109/ULTSYM.2009.5442012

Multi-band RF filter integrating different modes of AlN resonator by CMOS-compatible process

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Keywords

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