Multilevel charge storage in a multiple alloy nanodot memory

Gae Hun Lee, Jung Min Lee, Yun Heub Song, Ji Chel Bea, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler- Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory.

Original languageEnglish
Article number095001
JournalJapanese Journal of Applied Physics
Issue number9 PART 1
Publication statusPublished - 2011 Sept


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