TY - JOUR
T1 - Multinary wurtzite-type oxide semiconductors
T2 - Present status and perspectives
AU - Suzuki, Issei
AU - Omata, Takahisa
N1 - Funding Information:
This work was financially supported in part by a Grant-in-Aid for Scientific Research (B) (Grant No. 26289239) and a Grant-in- Aid for JSPS Fellows (Grant No. 26763).
Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2017/1
Y1 - 2017/1
N2 - Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors - β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2 - and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.
AB - Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors - β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2 - and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.
KW - band-gap engineering
KW - electrical property
KW - electronic band structure
KW - first-principles calculation
KW - optical property
KW - oxide semiconductors
KW - ternary wurtzite structure
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U2 - 10.1088/1361-6641/32/1/013007
DO - 10.1088/1361-6641/32/1/013007
M3 - Review article
AN - SCOPUS:85007238750
SN - 0268-1242
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 1
M1 - 013007
ER -