Abstract
We observed characteristic "carpet-bombing-like concaves" after time-to-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) measurement for silicon carbide metal-oxide-semiconductor capacitors with a thermally grown oxide. A multiple breakdown model is proposed to explain the formation mechanism of the carpet-bombing-like concaves in TZDB measurement. Results and analysis of our TDDB measurements consistently support our multiple breakdown model.
Original language | English |
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Article number | 08LA01 |
Journal | Japanese journal of applied physics |
Volume | 53 |
Issue number | 8 SPEC. ISSUE 1 |
DOIs | |
Publication status | Published - 2014 Aug |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)