Multiple-event-transient soft-error gate-level simulator for harsh radiation environments

Akira Mochizuki, Naoya Onizawa, Akira Tamakoshi, Takahiro Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


A gate-level simulator considering a multiple-event transient (MET) is proposed to design soft-error resilient VLSI chips for harsh radiation environments. Single event transients (SETs) at several logic gates might occur independently during a clock cycle, causing a wrong pulse captured in a D-flip-flop (D-F/F). To investigate the MET influence, SET effects at each gate are precisely modelled in the proposed primitive cell library. The proposed MET model can program the following three parameters of soft-error pulse as 1) probability of pulse generation, 2) the pulse width, and 3) the pulse position during each internal cycle. Moreover, the probability of generating the wrong pulse, its width, and its position are individually decided at each primitive cell, so that multi-event pulse generations at a combinational circuit are performed. For example, typical benchmark circuits synthesized under a 90nm CMOS technology are simulated in the proposed cell library, and the soft-error effect due to circuit styles is evaluated in accordance with the variety of fault-injection rate. Several correct logical values captured at each D-F/F are generated in spite of false conditions on internal nodes. This proposed cell library for a soft-error simulator at the harsh radiation environments is effectively used to re-verify the existing fault-tolerant circuits such as an ECC.

Original languageEnglish
Title of host publicationTENCON 2015 - 2015 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479986415
Publication statusPublished - 2016 Jan 5
Event35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao
Duration: 2015 Nov 12015 Nov 4

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450


Conference35th IEEE Region 10 Conference, TENCON 2015


  • cell-based design
  • gate-level simulation
  • particle strike
  • single-event transient
  • single-event upset
  • soft error


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