Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

Original languageEnglish
Pages (from-to)74-79
Number of pages6
JournalProceedings of The International Symposium on Multiple-Valued Logic
Publication statusPublished - 1996
EventProceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain
Duration: 1996 May 291996 May 31


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