Multiresistance characteristics of PCRAM with Ge 1Cu 2Te 3 and Ge 2 Sb 2Te 5 films

Yuta Saito, Yun Heub Song, Jung Min Lee, Yuji Sutou, Junichi Koike

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge 1sb 2Te 5 (GST) and Ge1Cu2Te 3 (GCT) are utilized as phase-change materials to realize high- and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10 3, 10 4, and 105\ \Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.

Original languageEnglish
Article number6293847
Pages (from-to)1399-1401
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2012


  • Ge Cu Te and Ge Sb Te (GST)
  • multilevel cell (MLC)
  • phase-change random access memory (PCRAM)


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