TY - JOUR
T1 - N-Polar growth of nitride semiconductors with MOVPE and its applications
AU - Matsuoka, Takashi
AU - Mitate, Toshitsugu
AU - Mizuno, Seiichiro
AU - Takahata, Hiroko
AU - Tanikawa, Tomoyuki
N1 - Funding Information:
Table 1 and Fig. 8 were obtained in Matsuoka Laboratory of Institute for Materials Research, Tohoku university up to March 2019. Authors would like to specially thank Drs. Takeshi Kimura (currently Sumitomo Chemicals), Kanako Shojiki (currently Mie University), and Kiattiwut Prasertsuk (currently NECTEC of Thailand).
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/3/15
Y1 - 2023/3/15
N2 - All white LEDs that largely contribute to the energy saving as well as high electron mobility transistors (HEMTs) powering the base stations of cellular phone networks are made from only Ga-polar materials epitaxially grown along the c-axis. N-polar material, which has the opposite crystal-direction, is considered having high potential for expanding the application field. In this paper, the present status of N-polar epitaxial growth in our lab. is reviewed. Especially, the growth mechanism of N-polar GaN on the widely used sapphire substrate is investigated in detail by using transmission electron microscopy. Finally, as device applications, solar cells, red LEDs, and inverted HEMT are described.
AB - All white LEDs that largely contribute to the energy saving as well as high electron mobility transistors (HEMTs) powering the base stations of cellular phone networks are made from only Ga-polar materials epitaxially grown along the c-axis. N-polar material, which has the opposite crystal-direction, is considered having high potential for expanding the application field. In this paper, the present status of N-polar epitaxial growth in our lab. is reviewed. Especially, the growth mechanism of N-polar GaN on the widely used sapphire substrate is investigated in detail by using transmission electron microscopy. Finally, as device applications, solar cells, red LEDs, and inverted HEMT are described.
KW - A1. Growth models
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
KW - B3. High electron mobility transistors
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2022.127056
DO - 10.1016/j.jcrysgro.2022.127056
M3 - Article
AN - SCOPUS:85146428233
SN - 0022-0248
VL - 606
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 127056
ER -