N-Polar growth of nitride semiconductors with MOVPE and its applications

Takashi Matsuoka, Toshitsugu Mitate, Seiichiro Mizuno, Hiroko Takahata, Tomoyuki Tanikawa

Research output: Contribution to journalArticlepeer-review


All white LEDs that largely contribute to the energy saving as well as high electron mobility transistors (HEMTs) powering the base stations of cellular phone networks are made from only Ga-polar materials epitaxially grown along the c-axis. N-polar material, which has the opposite crystal-direction, is considered having high potential for expanding the application field. In this paper, the present status of N-polar epitaxial growth in our lab. is reviewed. Especially, the growth mechanism of N-polar GaN on the widely used sapphire substrate is investigated in detail by using transmission electron microscopy. Finally, as device applications, solar cells, red LEDs, and inverted HEMT are described.

Original languageEnglish
Article number127056
JournalJournal of Crystal Growth
Publication statusPublished - 2023 Mar 15
Externally publishedYes


  • A1. Growth models
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. High electron mobility transistors
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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