N-polarity GaN on sapphire substrate grown by MOVPE

Takashi Matsuoka, Yasuyuki Kobayashi, Hiroko Takahata, Toshitugu Mitate, Seiichiro Mizuno, Atsushi Sasaki, Mamoru Yoshimoto, Tuyoshi Ohnishi, Masatomo Sumiya

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67 Citations (Scopus)


N-polar GaN was grown on (0001) sapphire using two-step growth technique by MOVPE. In the growth, the key points were the controlling of the density of nuclei in a buffer layer and promoting lateral growth at high temperature. The grown GaN films had mirror-like smooth surfaces and were proved to have N-polarity using convergent-beam electron diffraction and coaxial impact-collision ion spectroscopy. The FWHM of this GaN in the ω-scan was also much narrower than the previous reports. The density of threading dislocations was much less than for usual Ga-polar GaN grown with a GaN or Aln buffer layer by MOVPE and MBE. In PL at room temperature, the strong edge emission was observed as Ga-polarity. The p-type conduction in Mg-doped GaN was also realized by the same methods as for Ga-polarity.

Original languageEnglish
Pages (from-to)1446-1450
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number7
Publication statusPublished - 2006 Jun 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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