Nano-fabrication on Si oxide/Si surface by using STM: A low energy electron beam stimulated reaction

Nan Li, T. Yoshinobu, H. Iwasaki

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2 Citations (Scopus)


We report here an experimental study on nano-fabrication of the Si oxide/Si surface with a low energy electron stimulated reaction (LEESR) by using STM. By applying ~60 to 150 V bias voltage and exposing ~5 to 200 nA current to the Si oxide/Si surface, while the surface was kept at ~700°C and 100-200 nm away from the STM tip, a surface reaction was stimulated by the low energy e-beam exposing. Clean Si surface with clear atomic steps was observed within the exposed area that indicates a selective etching of Si oxide, by which windows down to 25 nm in diameter can be cut through the Si oxide overlayer. This result demonstrates evidently the possibility of nano-fabricating the Si oxide/Si surface through the low energy electron stimulated surface etching, and presents also another possibility of performing a well controlled nano-fabrication with the STM.

Original languageEnglish
Pages (from-to)305-312
Number of pages8
JournalApplied Surface Science
Issue number3-4
Publication statusPublished - 1999 Mar


  • 61.16.Ch
  • 68.65.+g
  • 79.60.Jv
  • 81.65.Cf
  • E-beam stimulated reaction
  • NAD
  • Nano-fabrication
  • SBA
  • SF
  • SJ
  • STM
  • Si oxide


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