Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications

Kangwook Lee; Ai Nakamura; Jicheol Bea; Takafumi Fukushima; Suresh Ramalingam; Xin Wu; Tanaka Tanaka; Mitsumasa Koyanagi

doi:10.1109/3DIC.2016.7970027

Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications

Kangwook Lee, Ai Nakamura, Jicheol Bea, Takafumi Fukushima, Suresh Ramalingam, Xin Wu, Tanaka Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 mΩ for each pair of 10μm electrode diameter. Normalized capacitance of CNP bundle with 80μm height is 0.2 fF per μm wire length.

Original language	English
Title of host publication	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509013999
DOIs	https://doi.org/10.1109/3DIC.2016.7970027
Publication status	Published - 2017 Jul 5
Event	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States Duration: 2016 Nov 8 → 2016 Nov 11

Publication series

Name	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Conference

Conference	2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
Country/Territory	United States
City	San Francisco
Period	16/11/8 → 16/11/11

Keywords

Cu nano-pillar (CNP)
exascale 2.5D/3D integration
nano-scale Cu direct bonding

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10.1109/3DIC.2016.7970027

Cite this

Lee, K., Nakamura, A., Bea, J., Fukushima, T., Ramalingam, S., Wu, X., Tanaka, T., & Koyanagi, M. (2017). Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 Article 7970027 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC.2016.7970027

Lee, Kangwook ; Nakamura, Ai ; Bea, Jicheol et al. / Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications. 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016).

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title = "Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications",

abstract = "We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 mΩ for each pair of 10μm electrode diameter. Normalized capacitance of CNP bundle with 80μm height is 0.2 fF per μm wire length.",

keywords = "Cu nano-pillar (CNP), exascale 2.5D/3D integration, nano-scale Cu direct bonding",

author = "Kangwook Lee and Ai Nakamura and Jicheol Bea and Takafumi Fukushima and Suresh Ramalingam and Xin Wu and Tanaka Tanaka and Mitsumasa Koyanagi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 ; Conference date: 08-11-2016 Through 11-11-2016",

year = "2017",

month = jul,

day = "5",

doi = "10.1109/3DIC.2016.7970027",

language = "English",

series = "2016 IEEE International 3D Systems Integration Conference, 3DIC 2016",

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Lee, K, Nakamura, A, Bea, J, Fukushima, T, Ramalingam, S, Wu, X, Tanaka, T & Koyanagi, M 2017, Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications. in 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016., 7970027, 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016, San Francisco, United States, 16/11/8. https://doi.org/10.1109/3DIC.2016.7970027

Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications. / Lee, Kangwook; Nakamura, Ai; Bea, Jicheol et al.
2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7970027 (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Kangwook

AU - Nakamura, Ai

AU - Bea, Jicheol

AU - Fukushima, Takafumi

AU - Ramalingam, Suresh

AU - Wu, Xin

AU - Tanaka, Tanaka

AU - Koyanagi, Mitsumasa

PY - 2017/7/5

Y1 - 2017/7/5

N2 - We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 mΩ for each pair of 10μm electrode diameter. Normalized capacitance of CNP bundle with 80μm height is 0.2 fF per μm wire length.

AB - We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 mΩ for each pair of 10μm electrode diameter. Normalized capacitance of CNP bundle with 80μm height is 0.2 fF per μm wire length.

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KW - exascale 2.5D/3D integration

KW - nano-scale Cu direct bonding

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BT - 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

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ER -

Lee K, Nakamura A, Bea J, Fukushima T, Ramalingam S, Wu X et al. Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications. In 2016 IEEE International 3D Systems Integration Conference, 3DIC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7970027. (2016 IEEE International 3D Systems Integration Conference, 3DIC 2016). doi: 10.1109/3DIC.2016.7970027

Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications

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