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Nanocolumn InGaN/GaN quantum-well crystals on flat and pillared Si substrates with nitrified Ga as a buffer layer
F. R. Hu, K. Ochi, Y. Zhao,
K. Hane
ENG - Finemechanics
Research output
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Contribution to journal
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Article
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peer-review
6
Citations (Scopus)
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Dive into the research topics of 'Nanocolumn InGaN/GaN quantum-well crystals on flat and pillared Si substrates with nitrified Ga as a buffer layer'. Together they form a unique fingerprint.
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Chemistry
Crystalline Material
100%
Structure
87%
Photoluminescence
50%
Reflectivity
25%
Optical Microscopy
12%
Raman Spectrum
12%
Confocal Laser Scanning Microscopy
12%
Surface
12%
Microscopy
12%
Engineering
Si Substrate
87%
Measurement
50%
Buffer Layer
12%
Raman Spectrum
12%
Flat Substrate
12%
Bright Light
12%
Efficiency
12%
Demonstrates
12%
Surfaces
12%
Images
12%
Extraction
12%
Biochemistry, Genetics and Molecular Biology
Crystal
100%
Photoluminescence
50%
Optics
12%
Confocal Laser Scanning Microscopy
12%
Light
12%
Spectrum
12%
Surface Property
12%
Microscopy
12%
Extraction
12%
Physics
Crystals
100%
Photoluminescence
50%
Quantum Wells
37%
Raman Spectra
12%
Images
12%
Material Science
Crystal
100%
Buffer Layer
12%
Surface
12%