TY - JOUR
T1 - Nanocrystalline silicon film prepared by laser annealing of organosilicon nanocluster
AU - Watanabe, Akira
AU - Hojo, Fusao
AU - Miwa, Takao
AU - Wakagi, Masatoshi
PY - 2002/4/1
Y1 - 2002/4/1
N2 - A novel process for the formation of nanocrystalline silicon film using an organosilicon nanocluster as a precursor was developed. A thin-film coating of the organosilicon nanocluster, soluble in common organic solvents, is preheated and then annealed by an excimer laser to yield a film of nanocrystalline silicon with approximately 10nm in size. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy.
AB - A novel process for the formation of nanocrystalline silicon film using an organosilicon nanocluster as a precursor was developed. A thin-film coating of the organosilicon nanocluster, soluble in common organic solvents, is preheated and then annealed by an excimer laser to yield a film of nanocrystalline silicon with approximately 10nm in size. The structural changes of the precursor film caused by preheating and excimer laser annealing were investigated by Raman spectroscopy.
KW - Laser annealing
KW - Nanocrystalline silicon
KW - Organosilicon nanocluster
KW - Precursor
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U2 - 10.1143/jjap.41.l378
DO - 10.1143/jjap.41.l378
M3 - Article
AN - SCOPUS:0036544453
SN - 0021-4922
VL - 41
SP - L378-L380
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 A
ER -