TY - JOUR
T1 - Nanocrystalline Zn2SiO4:Mn2+ grown in oxidized porous silicon
AU - Taghavinia, N.
AU - Lerondel, G.
AU - Makino, H.
AU - Yamamoto, A.
AU - Yao, T.
AU - Kawazoe, Y.
AU - Goto, T.
PY - 2001/12
Y1 - 2001/12
N2 - Zn2SiO4:Mn2+ nanocrystals were grown in an oxidized porous silicon layer using a chemical impregnation method. Apparently two classes of samples have been obtained. One is characterized by the formation of α-phase zinc silicate crystalline particles, which show green luminescence, and the other one is characterized by β-phase particles, showing yellow luminescence. It was found that in general prolonged annealing, as well as a high degree of impregnation leads to the formation of green-luminescent samples. The decay time of both yellow and green luminescence decreases with the concentration of Mn activator, while generally the decay time of yellow luminescence is considerably larger than that of green luminescence.
AB - Zn2SiO4:Mn2+ nanocrystals were grown in an oxidized porous silicon layer using a chemical impregnation method. Apparently two classes of samples have been obtained. One is characterized by the formation of α-phase zinc silicate crystalline particles, which show green luminescence, and the other one is characterized by β-phase particles, showing yellow luminescence. It was found that in general prolonged annealing, as well as a high degree of impregnation leads to the formation of green-luminescent samples. The decay time of both yellow and green luminescence decreases with the concentration of Mn activator, while generally the decay time of yellow luminescence is considerably larger than that of green luminescence.
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U2 - 10.1088/0957-4484/12/4/335
DO - 10.1088/0957-4484/12/4/335
M3 - Conference article
AN - SCOPUS:0035676186
SN - 0957-4484
VL - 12
SP - 547
EP - 551
JO - Nanotechnology
JF - Nanotechnology
IS - 4
T2 - 9th International Symposium on Nanostructures: Physics and Technology
Y2 - 18 June 2001 through 22 June 2001
ER -