@inproceedings{efb30d7758df42d0bf222fd0c61edc64,
title = "Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition",
abstract = "NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.",
keywords = "Logical gates, NAND, NOR, nanoelectromechanical switches, selective chemical vapor deposition",
author = "Toan, {Nguyen Van} and Dong Zhao and Naoki Inomata and Masaya Toda and Yunheub Song and Takahito Ono",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII ; Conference date: 23-06-2019 Through 27-06-2019",
year = "2019",
month = jun,
doi = "10.1109/TRANSDUCERS.2019.8808313",
language = "English",
series = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1709--1711",
booktitle = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",
address = "United States",
}