TY - JOUR
T1 - Nanoindentation measurements of a highly oriented wurtzite-Type boron nitride bulk crystal
AU - Deura, Momoko
AU - Kutsukake, Kentaro
AU - Ohno, Yutaka
AU - Yonenaga, Ichiro
AU - Taniguchi, Takashi
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/3
Y1 - 2017/3
N2 - We succeeded in synthesizing a bulk crystal of wurtzite-Type boron nitride (w-BN) by the direct conversion method. The synthesized crystal was approximately 2mm wide and 350μm thick, and highly oriented to the c-Axis. We performed nanoindentation measurements on the c-plane of the w-BN crystal at room temperature to evaluate the mechanical properties of w-BN. The hardness and Young's modulus of w-BN from the obtained curves were simultaneously determined to be 54 + 2 and 860 + 40GPa, respectively. The underlying physical mechanism that dominates the mechanical properties of group-III nitride semiconductors is also examined.
AB - We succeeded in synthesizing a bulk crystal of wurtzite-Type boron nitride (w-BN) by the direct conversion method. The synthesized crystal was approximately 2mm wide and 350μm thick, and highly oriented to the c-Axis. We performed nanoindentation measurements on the c-plane of the w-BN crystal at room temperature to evaluate the mechanical properties of w-BN. The hardness and Young's modulus of w-BN from the obtained curves were simultaneously determined to be 54 + 2 and 860 + 40GPa, respectively. The underlying physical mechanism that dominates the mechanical properties of group-III nitride semiconductors is also examined.
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U2 - 10.7567/JJAP.56.030301
DO - 10.7567/JJAP.56.030301
M3 - Article
AN - SCOPUS:85014385875
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3
M1 - 030301
ER -