TY - JOUR
T1 - Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM
T2 - Structure and magnetic properties
AU - Takeuchi, Yutaro
AU - Okuda, Ryotaro
AU - Igarashi, Junta
AU - Jinnai, Butsurin
AU - Saino, Takaharu
AU - Ikeda, Shoji
AU - Fukami, Shunsuke
AU - Ohno, Hideo
N1 - Funding Information:
The authors thank M. Shirai, H. Sato, T. Tanno, I. Morita, M. Bersweiler, R. Itoh, and T. Kishi for fruitful discussion and technical support. This work is partly supported by JSPS KAKENHI (No. 19H05622), JST OPERA (No. JPMJOP1611), and KIOXIA Corporation. This research has been partly carried out at the Fundamental Technology Center, Research Institute of Electrical Communication, Tohoku University. Figures 1(a) and 1(b) are partly created by VESTA.43
Publisher Copyright:
© 2022 Author(s).
PY - 2022/1/31
Y1 - 2022/1/31
N2 - The material development of magnetic tunnel junction with a perpendicular easy axis is in great demand to advance spin-transfer torque magnetoresistive random access memory (STT-MRAM) technologies. To realize high-speed and high-density STT-MRAM, a thin-film magnetic material with large perpendicular anisotropy and small spontaneous magnetization has great potential. Here, we develop a thin-film deposition technique for a-few-nanometer-thin L10-MnAl by sputtering and investigate its structure and magnetic properties. Utilization of the B2-CoAl buffer layer allows us to grow L10-MnAl with a large crystalline anisotropy of 8.5 × 105 J/m3, the small spontaneous magnetization of 0.62 T, and the tolerance for 400 °C annealing even at the MnAl thickness of 2 nm. We calculate the device properties based on the obtained material parameters and find that high retention properties, high-speed switching, and low write-error rate can be obtained at the single-digit-nm region, which are not readily achieved by conventional material systems. The results show the potential of L10-MnAl for high-density and high-speed STT-MRAM.
AB - The material development of magnetic tunnel junction with a perpendicular easy axis is in great demand to advance spin-transfer torque magnetoresistive random access memory (STT-MRAM) technologies. To realize high-speed and high-density STT-MRAM, a thin-film magnetic material with large perpendicular anisotropy and small spontaneous magnetization has great potential. Here, we develop a thin-film deposition technique for a-few-nanometer-thin L10-MnAl by sputtering and investigate its structure and magnetic properties. Utilization of the B2-CoAl buffer layer allows us to grow L10-MnAl with a large crystalline anisotropy of 8.5 × 105 J/m3, the small spontaneous magnetization of 0.62 T, and the tolerance for 400 °C annealing even at the MnAl thickness of 2 nm. We calculate the device properties based on the obtained material parameters and find that high retention properties, high-speed switching, and low write-error rate can be obtained at the single-digit-nm region, which are not readily achieved by conventional material systems. The results show the potential of L10-MnAl for high-density and high-speed STT-MRAM.
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U2 - 10.1063/5.0077874
DO - 10.1063/5.0077874
M3 - Article
AN - SCOPUS:85124475318
SN - 0003-6951
VL - 120
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
M1 - 052404
ER -