Nanoscale patterning of Au films on Si surfaces by atomic force microscopy

Won Chul Moon, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We studied a new method of patterning a metal layer on silicon surfaces in the nanometer range. The process combines anodic oxidation patterning with atomic force microscopy, deposition of a Au thin film on a patterned substrate and chemical etching of the Si oxide that lies underneath the Au film. When the thickness of the deposited Au film is 2-5 nm, by chemical etching to remove the SiO2 pattern, the Au film bent down, sticking to the Si surface. For a Au film of 1 nm thickness, it was possible to selectively remove the Au film on the SiO2 pattern by chemical etching of the SiO2 pattern.

Original languageEnglish
Pages (from-to)6952-6954
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number12 A
Publication statusPublished - 1999 Dec 1


  • AFM
  • Anodic oxidation
  • Au film
  • Chemical etching
  • Patterning
  • Silicon


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