Nanoscale TiN wet etching and its application for FinFET fabrication

Y. X. Liu; T. Kamei; K. Endo; S. O'uchi; J. Tsukada; H. Yamauchi; T. Hayashida; Y. Ishikawa; T. Matsukawa; K. Sakamoto; A. Ogura; M. Masahara

doi:10.1109/ISDRS.2009.5378248

Nanoscale TiN wet etching and its application for FinFET fabrication

Y. X. Liu, T. Kamei, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, T. Hayashida, Y. Ishikawa, T. Matsukawa, K. Sakamoto, A. Ogura, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

The nanoscale TiN wet etching and its application for FinFET fabrication have been systematically investigated. It is experimentally found that the TiN side-etching can be controlled to be half of TiN thickness with precise time control. By using the developed nanoscale TiN wet etching technique, sub-30-nm physical gate length FinFETs, 100-nm tall fin CMOS inverters and SRAM half-cells have successfully been fabricated. These experimental results indicate that the developed nanoscale TiN wet etching technique is very useful for the tall fin CMOS fabrication.

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378248
Publication status	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 2009 Dec 9 → 2009 Dec 11

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09/12/9 → 09/12/11

Access to Document

10.1109/ISDRS.2009.5378248

Cite this

Liu, Y. X., Kamei, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Hayashida, T., Ishikawa, Y., Matsukawa, T., Sakamoto, K., Ogura, A., & Masahara, M. (2009). Nanoscale TiN wet etching and its application for FinFET fabrication. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378248 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378248

@inproceedings{dd597792d7044a75bef17d99095fe517,

title = "Nanoscale TiN wet etching and its application for FinFET fabrication",

abstract = "The nanoscale TiN wet etching and its application for FinFET fabrication have been systematically investigated. It is experimentally found that the TiN side-etching can be controlled to be half of TiN thickness with precise time control. By using the developed nanoscale TiN wet etching technique, sub-30-nm physical gate length FinFETs, 100-nm tall fin CMOS inverters and SRAM half-cells have successfully been fabricated. These experimental results indicate that the developed nanoscale TiN wet etching technique is very useful for the tall fin CMOS fabrication.",

author = "Liu, {Y. X.} and T. Kamei and K. Endo and S. O'uchi and J. Tsukada and H. Yamauchi and T. Hayashida and Y. Ishikawa and T. Matsukawa and K. Sakamoto and A. Ogura and M. Masahara",

year = "2009",

doi = "10.1109/ISDRS.2009.5378248",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Liu, YX, Kamei, T, Endo, K, O'uchi, S, Tsukada, J, Yamauchi, H, Hayashida, T, Ishikawa, Y, Matsukawa, T, Sakamoto, K, Ogura, A & Masahara, M 2009, Nanoscale TiN wet etching and its application for FinFET fabrication. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378248, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09/12/9. https://doi.org/10.1109/ISDRS.2009.5378248

Nanoscale TiN wet etching and its application for FinFET fabrication. / Liu, Y. X.; Kamei, T.; Endo, K. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378248 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanoscale TiN wet etching and its application for FinFET fabrication

AU - Liu, Y. X.

AU - Kamei, T.

AU - Endo, K.

AU - O'uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Hayashida, T.

AU - Ishikawa, Y.

AU - Matsukawa, T.

AU - Sakamoto, K.

AU - Ogura, A.

AU - Masahara, M.

PY - 2009

Y1 - 2009

N2 - The nanoscale TiN wet etching and its application for FinFET fabrication have been systematically investigated. It is experimentally found that the TiN side-etching can be controlled to be half of TiN thickness with precise time control. By using the developed nanoscale TiN wet etching technique, sub-30-nm physical gate length FinFETs, 100-nm tall fin CMOS inverters and SRAM half-cells have successfully been fabricated. These experimental results indicate that the developed nanoscale TiN wet etching technique is very useful for the tall fin CMOS fabrication.

AB - The nanoscale TiN wet etching and its application for FinFET fabrication have been systematically investigated. It is experimentally found that the TiN side-etching can be controlled to be half of TiN thickness with precise time control. By using the developed nanoscale TiN wet etching technique, sub-30-nm physical gate length FinFETs, 100-nm tall fin CMOS inverters and SRAM half-cells have successfully been fabricated. These experimental results indicate that the developed nanoscale TiN wet etching technique is very useful for the tall fin CMOS fabrication.

UR - http://www.scopus.com/inward/record.url?scp=77949365663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949365663&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378248

DO - 10.1109/ISDRS.2009.5378248

M3 - Conference contribution

AN - SCOPUS:77949365663

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Nanoscale TiN wet etching and its application for FinFET fabrication

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this