TY - JOUR
T1 - Nanosecond microscopy of capacitance at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy
AU - Yamagishi, Y.
AU - Cho, Y.
N1 - Funding Information:
This study was supported by the Cross-ministerial Strategic Innovation Promotion Program (SIP) of the cabinet of Japan and Grant-in-Aid for Scientific Research (S) (Grant No. 16H06360) from the Japan Society for the Promotion of Science. We wish to thank R. Kosugi at National Institute of Advanced Industrial Science and Technology (AIST) for supplying samples.
Publisher Copyright:
© 2017 Author(s).
PY - 2017/10/16
Y1 - 2017/10/16
N2 - The time-resolved measurement of capacitance is a powerful method in the evaluation of defects in semiconductors, carrier dynamics in quantum dots, and photo-induced dynamics in photovoltaic materials. In this study, we demonstrate time-resolved capacitance measurements at the nanoscale using scanning nonlinear dielectric microscopy. We detected the capacitance transient of SiO2/4H-SiC interfaces triggered by the application of a 3 ns pulse, showing the high temporal resolution of the developed method. We exemplified the method with the evaluation of the density and activation energy of defects at SiO2/4H-SiC interfaces that verified the quantitative capability and high sensitivity of the method. Two-dimensional mapping of the interface states showed nanoscale inhomogeneous contrasts, implying that the physical origin of the defects at SiO2/4H-SiC interfaces is microscopically clustered.
AB - The time-resolved measurement of capacitance is a powerful method in the evaluation of defects in semiconductors, carrier dynamics in quantum dots, and photo-induced dynamics in photovoltaic materials. In this study, we demonstrate time-resolved capacitance measurements at the nanoscale using scanning nonlinear dielectric microscopy. We detected the capacitance transient of SiO2/4H-SiC interfaces triggered by the application of a 3 ns pulse, showing the high temporal resolution of the developed method. We exemplified the method with the evaluation of the density and activation energy of defects at SiO2/4H-SiC interfaces that verified the quantitative capability and high sensitivity of the method. Two-dimensional mapping of the interface states showed nanoscale inhomogeneous contrasts, implying that the physical origin of the defects at SiO2/4H-SiC interfaces is microscopically clustered.
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U2 - 10.1063/1.4999794
DO - 10.1063/1.4999794
M3 - Article
AN - SCOPUS:85031742110
SN - 0003-6951
VL - 111
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 163103
ER -
