Native oxide growth on silicon surface in wet ambient

Mizuho Morita; Tadahiro Ohmi; Eiji Hasegawa; Akinobu Teramoto

Native oxide growth on silicon surface in wet ambient

Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa, Akinobu Teramoto

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

10 Citations (Scopus)

Abstract

The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n⁺-Si surfaces (10²⁰ cm^-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n^--Si (10¹⁵ cm^-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n^--Si in hydrogenperoxide (H₂O₂) solution or in H₂O₂ solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.

Original language	English
Pages	1063-1066
Number of pages	4
Publication status	Published - 1990 Dec 1
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Native oxide growth on silicon surface in wet ambient",

abstract = "The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n+-Si surfaces (1020 cm-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n--Si (1015 cm-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n--Si in hydrogenperoxide (H2O2) solution or in H2O2 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.",

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year = "1990",

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note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

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T1 - Native oxide growth on silicon surface in wet ambient

AU - Morita, Mizuho

AU - Ohmi, Tadahiro

AU - Hasegawa, Eiji

AU - Teramoto, Akinobu

PY - 1990/12/1

Y1 - 1990/12/1

N2 - The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n+-Si surfaces (1020 cm-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n--Si (1015 cm-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n--Si in hydrogenperoxide (H2O2) solution or in H2O2 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.

AB - The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n+-Si surfaces (1020 cm-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n--Si (1015 cm-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n--Si in hydrogenperoxide (H2O2) solution or in H2O2 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.

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M3 - Paper

AN - SCOPUS:0025566383

SP - 1063

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T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

Native oxide growth on silicon surface in wet ambient

Abstract

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