Nb-doped SrTiO3-based high-temperature Schottky solar cells

Fumimasa Horikiri, Tomoyuki Ichikawa, Li Qun Han, Atsushi Kaimai, Keiji Yashiro, Hiroshige Matsumoto, Tatsuya Kawada, Junichiro Mizusaki

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8 Citations (Scopus)


The high-temperature characteristics of donor-doped SrTiO 3/indium tin oxide (ITO) Schottky solar cells were investigated by current-voltage and impedance analyses at various oxygen partial pressures (PO2) (1-10-4 bar) at 873 K. Both current-voltage and impedance characteristics showed a reversible oxygen partial pressure dependence. The junctions demonstrated the photovoltaic effect even at high temperatures, which means the nonohmic behavior of the heterojunction remains even at high temperatures. The highest open circuit voltage and short circuit current density were 123 mV and 1.37 mA cm-2, respectively, at 1 bar O2 under 261 mW cm-2 UV irradiation. Incident photon-to-current conversion efficiency and energy conversion efficiency improved as PO2 increased. The influence of oxygen partial pressure on the solar cell characteristics is discussed.

Original languageEnglish
Pages (from-to)8023-8026
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number11
Publication statusPublished - 2005 Nov 9


  • High temperature
  • ITO
  • Schottky barrier
  • Solar cell
  • SrTiO


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