Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki; T. Yokoya; J. Nakamura; N. Yamada; T. Nakamura; T. Muro; Y. Tamenori; T. Matsushita; Y. Takata; T. Tokushima; S. Shin; Y. Takano; M. Nagao; T. Takenouchi; H. Kawarada; T. Oguchi

doi:10.1016/j.jpcs.2008.06.006

Near E_F electronic structure of heavily boron-doped superconducting diamond

H. Okazaki, T. Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (T_c=7.2 K) in order to study the electronic structure near the Fermi level (E_F). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that E_F is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at E_F were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

Original language	English
Pages (from-to)	2978-2981
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	12
DOIs	https://doi.org/10.1016/j.jpcs.2008.06.006
Publication status	Published - 2008 Dec
Externally published	Yes

Keywords

C. Photoelectron spectroscopy
D. Electronic structure
D. Fermi surface
D. Superconductivity

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2008.06.006

Cite this

Okazaki, H., Yokoya, T., Nakamura, J., Yamada, N., Nakamura, T., Muro, T., Tamenori, Y., Matsushita, T., Takata, Y., Tokushima, T., Shin, S., Takano, Y., Nagao, M., Takenouchi, T., Kawarada, H., & Oguchi, T. (2008). Near E_F electronic structure of heavily boron-doped superconducting diamond. Journal of Physics and Chemistry of Solids, 69(12), 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006

Okazaki, H, Yokoya, T, Nakamura, J, Yamada, N, Nakamura, T, Muro, T, Tamenori, Y, Matsushita, T, Takata, Y, Tokushima, T, Shin, S, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2008, 'Near E_F electronic structure of heavily boron-doped superconducting diamond', Journal of Physics and Chemistry of Solids, vol. 69, no. 12, pp. 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006

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title = "Near EF electronic structure of heavily boron-doped superconducting diamond",

abstract = "We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown",

keywords = "C. Photoelectron spectroscopy, D. Electronic structure, D. Fermi surface, D. Superconductivity",

author = "H. Okazaki and T. Yokoya and J. Nakamura and N. Yamada and T. Nakamura and T. Muro and Y. Tamenori and T. Matsushita and Y. Takata and T. Tokushima and S. Shin and Y. Takano and M. Nagao and T. Takenouchi and H. Kawarada and T. Oguchi",

note = "Funding Information: This study was supported by CREST and Grants-in-Aid for Exploratory Research (17654070) from Japan Society for the Promotion of Science. The PES measurements at SPring-8 were performed under a Proposal number J04B25SU-0523N. ",

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doi = "10.1016/j.jpcs.2008.06.006",

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AU - Okazaki, H.

AU - Yokoya, T.

AU - Nakamura, J.

AU - Yamada, N.

AU - Nakamura, T.

AU - Muro, T.

AU - Tamenori, Y.

AU - Matsushita, T.

AU - Takata, Y.

AU - Tokushima, T.

AU - Shin, S.

AU - Takano, Y.

AU - Nagao, M.

AU - Takenouchi, T.

AU - Kawarada, H.

AU - Oguchi, T.

N1 - Funding Information: This study was supported by CREST and Grants-in-Aid for Exploratory Research (17654070) from Japan Society for the Promotion of Science. The PES measurements at SPring-8 were performed under a Proposal number J04B25SU-0523N.

PY - 2008/12

Y1 - 2008/12

N2 - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

AB - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

KW - C. Photoelectron spectroscopy

KW - D. Electronic structure

KW - D. Fermi surface

KW - D. Superconductivity

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