Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

Hidetoshi Iwamura; Tadashi Saku; Yoshiro Hirayama; Yoshifumi Suzuki; Hiroshi Okamoto

doi:10.1143/JJAP.24.L911

Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm² (pulse) and 8 kA/cm² (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.

Original language	English
Pages (from-to)	L911-L913
Journal	Japanese Journal of Applied Physics
Volume	24
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.24.L911
Publication status	Published - 1985 Dec

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@article{c291a819bdf246e19691fed169726c72,

title = "Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy",

abstract = "CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm2 (pulse) and 8 kA/cm2 (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.",

author = "Hidetoshi Iwamura and Tadashi Saku and Yoshiro Hirayama and Yoshifumi Suzuki and Hiroshi Okamoto",

year = "1985",

month = dec,

doi = "10.1143/JJAP.24.L911",

language = "English",

volume = "24",

pages = "L911--L913",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

AU - Iwamura, Hidetoshi

AU - Saku, Tadashi

AU - Hirayama, Yoshiro

AU - Suzuki, Yoshifumi

AU - Okamoto, Hiroshi

PY - 1985/12

Y1 - 1985/12

N2 - CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm2 (pulse) and 8 kA/cm2 (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.

AB - CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm2 (pulse) and 8 kA/cm2 (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.

UR - http://www.scopus.com/inward/record.url?scp=0022211893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022211893&partnerID=8YFLogxK

U2 - 10.1143/JJAP.24.L911

DO - 10.1143/JJAP.24.L911

M3 - Article

AN - SCOPUS:0022211893

SN - 0021-4922

VL - 24

SP - L911-L913

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

ER -

Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

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