TY - GEN
T1 - Near-Zero TCF of HAL SAW Resonator with LiTaO 3 -on-Quartz Structure
AU - Kadota, Michio
AU - Yunoki, Yoshimi
AU - Shimatsu, Takehito
AU - Uomot, Miyuki
AU - Tanaka, Shuji
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/31
Y1 - 2018/12/31
N2 - This paper reports the recent progress of a new type of hetero acoustic layer (HAL) surface acoustic wave (SAW) resonators using a 0.44 \text{to} 1.12 \mu \mathrm{m} thick rotated-Y LiTa03 (LT) plate and a near ST-cut quartz substrate. This material combination was selected, because quartz has a higher velocity of leaky SAW than LT and a positive temperature coefficient of frequency (TCF). An impedance ratio of 82 dB and a Bode Q of 3, 000 were obtained, and TCFs at series and parallel resonance were measured to be +2 and -10 ppm/PC, respectively. Compared with the characteristics of a standard 42°YX LT SAW resonator fabricated in the same facility, the impedance ratio is higher by 31 dB, the bode Q is 6.3 times higher, and the TCFs at series and parallel resonance are as small as 1/25 and 1/6, respectively.
AB - This paper reports the recent progress of a new type of hetero acoustic layer (HAL) surface acoustic wave (SAW) resonators using a 0.44 \text{to} 1.12 \mu \mathrm{m} thick rotated-Y LiTa03 (LT) plate and a near ST-cut quartz substrate. This material combination was selected, because quartz has a higher velocity of leaky SAW than LT and a positive temperature coefficient of frequency (TCF). An impedance ratio of 82 dB and a Bode Q of 3, 000 were obtained, and TCFs at series and parallel resonance were measured to be +2 and -10 ppm/PC, respectively. Compared with the characteristics of a standard 42°YX LT SAW resonator fabricated in the same facility, the impedance ratio is higher by 31 dB, the bode Q is 6.3 times higher, and the TCFs at series and parallel resonance are as small as 1/25 and 1/6, respectively.
KW - bode Q
KW - hetero acoustic layer
KW - impedance ratio
KW - LiTa03
KW - quartz
KW - SAW resonator
KW - TCF
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U2 - 10.1109/FCS.2018.8597496
DO - 10.1109/FCS.2018.8597496
M3 - Conference contribution
AN - SCOPUS:85061832177
T3 - IFCS 2018 - IEEE International Frequency Control Symposium
BT - IFCS 2018 - IEEE International Frequency Control Symposium
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 72nd Annual International Frequency Control Symposium, IFCS 2018
Y2 - 21 May 2018 through 24 May 2018
ER -