TY - GEN
T1 - Necessary thickness of au capping layers for room temperature bonding of wafers in air using thin metal films with au capping layers
AU - Uomoto, M.
AU - Shimatsu, T.
N1 - Publisher Copyright:
© 2016 The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - This study elucidated room temperature bonding of wafers in air using Ag, Al, and Cu films with thin Au capping layers. To avoid oxidation of 20-nm-thick of Ag and Cu films, a 2-nm-thick Au layer was found to be effective. Bonding was achieved in air over the entire area without a loading pressure. However, the necessary thickness of the Au capping layer for 20-nm-thick Al films was 6 nm or more, which is three times thicker than those for Ag and Cu films. The necessary Au layer thickness increased as the thicknesses of Al and Ag layers increased. Moreover, a loading pressure was necessary for bonding using thick films. These results were attributed to increased the surface roughness. However, the necessary Au capping layer thickness for bonding was 1/10 or less of the thickness of Al or Ag layers in the present thickness range of 20-500 nm.
AB - This study elucidated room temperature bonding of wafers in air using Ag, Al, and Cu films with thin Au capping layers. To avoid oxidation of 20-nm-thick of Ag and Cu films, a 2-nm-thick Au layer was found to be effective. Bonding was achieved in air over the entire area without a loading pressure. However, the necessary thickness of the Au capping layer for 20-nm-thick Al films was 6 nm or more, which is three times thicker than those for Ag and Cu films. The necessary Au layer thickness increased as the thicknesses of Al and Ag layers increased. Moreover, a loading pressure was necessary for bonding using thick films. These results were attributed to increased the surface roughness. However, the necessary Au capping layer thickness for bonding was 1/10 or less of the thickness of Al or Ag layers in the present thickness range of 20-500 nm.
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U2 - 10.1149/07509.0067ecst
DO - 10.1149/07509.0067ecst
M3 - Conference contribution
AN - SCOPUS:84991458148
T3 - ECS Transactions
SP - 67
EP - 76
BT - Semiconductor Wafer Bonding
A2 - Suga, T.
A2 - Baumgart, H.
A2 - Fournel, F.
A2 - Goorsky, M. S.
A2 - Hobart, K. D.
A2 - Knechtel, R.
A2 - Tan, C. S.
PB - Electrochemical Society Inc.
T2 - Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
Y2 - 2 October 2016 through 7 October 2016
ER -