Negatively charged excitons in a back-gated undoped heterostructure

S. Nomura; M. Yamaguchi; D. Sato; T. Akazaki; H. Tamura; H. Takayanagi; T. Saku; Y. Hirayama

doi:10.1063/1.1994524

Negatively charged excitons in a back-gated undoped heterostructure

S. Nomura, M. Yamaguchi, D. Sato, T. Akazaki, H. Tamura, H. Takayanagi, T. Saku, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The observation of negatively charged excitons in a back-gated undoped GaAs/AlGaAs quantum well is reported in magnetic fields depending on the electron density between 1 × 10⁹ - 2 × 10¹¹ cm^-2. We find that a peak appears 0.3 meV below the singlet charged exciton state at 5 T, which develops to the lowest Landau-level with increase in the electron density.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	1162-1163
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994524
Publication status	Published - 2005 Jun 30
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 2004 Jul 26 → 2004 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	04/7/26 → 04/7/30

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10.1063/1.1994524

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Nomura, S., Yamaguchi, M., Sato, D., Akazaki, T., Tamura, H., Takayanagi, H., Saku, T., & Hirayama, Y. (2005). Negatively charged excitons in a back-gated undoped heterostructure. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1162-1163). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994524

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title = "Negatively charged excitons in a back-gated undoped heterostructure",

abstract = "The observation of negatively charged excitons in a back-gated undoped GaAs/AlGaAs quantum well is reported in magnetic fields depending on the electron density between 1 × 109 - 2 × 1011 cm-2. We find that a peak appears 0.3 meV below the singlet charged exciton state at 5 T, which develops to the lowest Landau-level with increase in the electron density.",

author = "S. Nomura and M. Yamaguchi and D. Sato and T. Akazaki and H. Tamura and H. Takayanagi and T. Saku and Y. Hirayama",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994524",

language = "English",

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series = "AIP Conference Proceedings",

pages = "1162--1163",

booktitle = "PHYSICS OF SEMICONDUCTORS",

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Nomura, S, Yamaguchi, M, Sato, D, Akazaki, T, Tamura, H, Takayanagi, H, Saku, T & Hirayama, Y 2005, Negatively charged excitons in a back-gated undoped heterostructure. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 1162-1163, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994524

Negatively charged excitons in a back-gated undoped heterostructure. / Nomura, S.; Yamaguchi, M.; Sato, D. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1162-1163 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Negatively charged excitons in a back-gated undoped heterostructure

AU - Nomura, S.

AU - Yamaguchi, M.

AU - Sato, D.

AU - Akazaki, T.

AU - Tamura, H.

AU - Takayanagi, H.

AU - Saku, T.

AU - Hirayama, Y.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The observation of negatively charged excitons in a back-gated undoped GaAs/AlGaAs quantum well is reported in magnetic fields depending on the electron density between 1 × 109 - 2 × 1011 cm-2. We find that a peak appears 0.3 meV below the singlet charged exciton state at 5 T, which develops to the lowest Landau-level with increase in the electron density.

AB - The observation of negatively charged excitons in a back-gated undoped GaAs/AlGaAs quantum well is reported in magnetic fields depending on the electron density between 1 × 109 - 2 × 1011 cm-2. We find that a peak appears 0.3 meV below the singlet charged exciton state at 5 T, which develops to the lowest Landau-level with increase in the electron density.

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M3 - Conference contribution

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BT - PHYSICS OF SEMICONDUCTORS

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Y2 - 26 July 2004 through 30 July 2004

ER -

Negatively charged excitons in a back-gated undoped heterostructure

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