Networked-nanographite wire grown on SiO2 dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD

Motonobu Sato; Shuichi Ogawa; Toshiteru Kaga; Haruki Sumi; Eiji Ikenaga; Yuji Takakuwa; Mizuhisa Nihei; Naoki Yokoyama

doi:10.1109/IITC.2010.5510745

Networked-nanographite wire grown on SiO₂ dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD

Motonobu Sato, Shuichi Ogawa, Toshiteru Kaga, Haruki Sumi, Eiji Ikenaga, Yuji Takakuwa, Mizuhisa Nihei, Naoki Yokoyama

Micro System Integration Center (μSIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.

Original language	English
Title of host publication	2010 IEEE International Interconnect Technology Conference, IITC 2010
DOIs	https://doi.org/10.1109/IITC.2010.5510745
Publication status	Published - 2010
Event	2010 IEEE International Interconnect Technology Conference, IITC 2010 - Burlingame, CA, United States Duration: 2010 Jun 6 → 2010 Jun 9

Publication series

Name	2010 IEEE International Interconnect Technology Conference, IITC 2010

Conference

Conference	2010 IEEE International Interconnect Technology Conference, IITC 2010
Country/Territory	United States
City	Burlingame, CA
Period	10/6/6 → 10/6/9

Access to Document

10.1109/IITC.2010.5510745

Cite this

Sato, M., Ogawa, S., Kaga, T., Sumi, H., Ikenaga, E., Takakuwa, Y., Nihei, M., & Yokoyama, N. (2010). Networked-nanographite wire grown on SiO₂ dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD. In 2010 IEEE International Interconnect Technology Conference, IITC 2010 Article 5510745 (2010 IEEE International Interconnect Technology Conference, IITC 2010). https://doi.org/10.1109/IITC.2010.5510745

@inproceedings{f4ce7cb21cfc4d219b000429c7625c70,

title = "Networked-nanographite wire grown on SiO2 dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD",

abstract = "We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.",

author = "Motonobu Sato and Shuichi Ogawa and Toshiteru Kaga and Haruki Sumi and Eiji Ikenaga and Yuji Takakuwa and Mizuhisa Nihei and Naoki Yokoyama",

year = "2010",

doi = "10.1109/IITC.2010.5510745",

language = "English",

isbn = "9781424476763",

series = "2010 IEEE International Interconnect Technology Conference, IITC 2010",

booktitle = "2010 IEEE International Interconnect Technology Conference, IITC 2010",

note = "2010 IEEE International Interconnect Technology Conference, IITC 2010 ; Conference date: 06-06-2010 Through 09-06-2010",

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Sato, M, Ogawa, S, Kaga, T, Sumi, H, Ikenaga, E, Takakuwa, Y, Nihei, M & Yokoyama, N 2010, Networked-nanographite wire grown on SiO₂ dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD. in 2010 IEEE International Interconnect Technology Conference, IITC 2010., 5510745, 2010 IEEE International Interconnect Technology Conference, IITC 2010, 2010 IEEE International Interconnect Technology Conference, IITC 2010, Burlingame, CA, United States, 10/6/6. https://doi.org/10.1109/IITC.2010.5510745

Networked-nanographite wire grown on SiO₂ dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD. / Sato, Motonobu; Ogawa, Shuichi; Kaga, Toshiteru et al.
2010 IEEE International Interconnect Technology Conference, IITC 2010. 2010. 5510745 (2010 IEEE International Interconnect Technology Conference, IITC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sato, Motonobu

AU - Ogawa, Shuichi

AU - Kaga, Toshiteru

AU - Sumi, Haruki

AU - Ikenaga, Eiji

AU - Takakuwa, Yuji

AU - Nihei, Mizuhisa

AU - Yokoyama, Naoki

PY - 2010

Y1 - 2010

N2 - We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.

AB - We have developed networked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.

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Sato M, Ogawa S, Kaga T, Sumi H, Ikenaga E, Takakuwa Y et al. Networked-nanographite wire grown on SiO₂ dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD. In 2010 IEEE International Interconnect Technology Conference, IITC 2010. 2010. 5510745. (2010 IEEE International Interconnect Technology Conference, IITC 2010). doi: 10.1109/IITC.2010.5510745