Neutral beam oxidation for oxide-based nanodevice

T. Ohno; D. Nakayama; S. Samukawa

doi:10.1109/NANO.2016.7751310

Neutral beam oxidation for oxide-based nanodevice

T. Ohno, D. Nakayama, S. Samukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta₂O₅ film with a high film density was obtained, and a fabricated Cu/Ta₂O₅/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlO_x/GeO_x/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	171-173
Number of pages	3
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751310
Publication status	Published - 2016 Nov 21
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 2016 Aug 22 → 2016 Aug 25

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	16/8/22 → 16/8/25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1109/NANO.2016.7751310

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Neutral beam oxidation for oxide-based nanodevice. / Ohno, T.; Nakayama, D.; Samukawa, S.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 171-173 7751310 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohno, T, Nakayama, D & Samukawa, S 2016, Neutral beam oxidation for oxide-based nanodevice. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751310, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 171-173, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751310

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title = "Neutral beam oxidation for oxide-based nanodevice",

abstract = "In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.",

author = "T. Ohno and D. Nakayama and S. Samukawa",

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doi = "10.1109/NANO.2016.7751310",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

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T1 - Neutral beam oxidation for oxide-based nanodevice

AU - Ohno, T.

AU - Nakayama, D.

AU - Samukawa, S.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.

AB - In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.

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BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

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ER -

Neutral beam oxidation for oxide-based nanodevice

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