A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.
- Semiconductor devices and materials
- Semiconductor lasers