New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Y. Itaya; T. Matsuoka; Y. Nakano; Y. Suzuki; K. Kuroiwa; T. Ikegami

doi:10.1049/el:19820689

New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, T. Ikegami

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.

Original language	English
Pages (from-to)	1006-1008
Number of pages	3
Journal	Electronics Letters
Volume	18
Issue number	23
DOIs	https://doi.org/10.1049/el:19820689
Publication status	Published - 1982 Nov 11

Keywords

Semiconductor devices and materials
Semiconductor lasers

Access to Document

10.1049/el:19820689

Cite this

@article{770df3e8a0bb4f9787d576e8c13fad3e,

title = "New 1.5 μm wavelength GaInAsp/InP distributed feedback laser",

abstract = "A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.",

keywords = "Semiconductor devices and materials, Semiconductor lasers",

author = "Y. Itaya and T. Matsuoka and Y. Nakano and Y. Suzuki and K. Kuroiwa and T. Ikegami",

year = "1982",

month = nov,

day = "11",

doi = "10.1049/el:19820689",

language = "English",

volume = "18",

pages = "1006--1008",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "23",

}

TY - JOUR

T1 - New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

AU - Itaya, Y.

AU - Matsuoka, T.

AU - Nakano, Y.

AU - Suzuki, Y.

AU - Kuroiwa, K.

AU - Ikegami, T.

PY - 1982/11/11

Y1 - 1982/11/11

N2 - A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.

AB - A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.

KW - Semiconductor devices and materials

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0020208333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020208333&partnerID=8YFLogxK

U2 - 10.1049/el:19820689

DO - 10.1049/el:19820689

M3 - Article

AN - SCOPUS:0020208333

SN - 0013-5194

VL - 18

SP - 1006

EP - 1008

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this