New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, T. Ikegami

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.

Original languageEnglish
Pages (from-to)1006-1008
Number of pages3
JournalElectronics Letters
Issue number23
Publication statusPublished - 1982 Nov 11


  • Semiconductor devices and materials
  • Semiconductor lasers


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