New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Moon Sik Seo; Tetsuo Endoh

doi:10.1109/VTSA.2011.5872270

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Moon Sik Seo, Tetsuo Endoh

ENG - Electrical Engineering

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

We intensively investigated the interference effect by direct or indirect coupling path with neighboring cells of the 3-Dimensional (3-D) vertical Floating Gate (FG) type NAND cell arrays. Above all, we proposed the optimum 3-D vertical FG type NAND cell array structure to fully suppress the interference effects.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	152-153
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872270
Publication status	Published - 2011
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	11/4/25 → 11/4/27

Keywords

3-D vertical cell
FG type NAND
Interference effect

Access to Document

10.1109/VTSA.2011.5872270

Cite this

Seo, M. S., & Endoh, T. (2011). New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 152-153). Article 5872270 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872270

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abstract = "We intensively investigated the interference effect by direct or indirect coupling path with neighboring cells of the 3-Dimensional (3-D) vertical Floating Gate (FG) type NAND cell arrays. Above all, we proposed the optimum 3-D vertical FG type NAND cell array structure to fully suppress the interference effects.",

keywords = "3-D vertical cell, FG type NAND, Interference effect",

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Seo, MS & Endoh, T 2011, New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872270, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 152-153, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872270

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect. / Seo, Moon Sik; Endoh, Tetsuo.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 152-153 5872270 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We intensively investigated the interference effect by direct or indirect coupling path with neighboring cells of the 3-Dimensional (3-D) vertical Floating Gate (FG) type NAND cell arrays. Above all, we proposed the optimum 3-D vertical FG type NAND cell array structure to fully suppress the interference effects.

KW - 3-D vertical cell

KW - FG type NAND

KW - Interference effect

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Seo MS, Endoh T. New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 152-153. 5872270. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872270

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

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