TY - JOUR
T1 - New driving scheme to improve hysteresis characteristics of organic thin film transistor-driven active-matrix organic light emitting diode display
AU - Yamamoto, Toshihiro
AU - Nakajima, Yoshiki
AU - Takei, Tatsuya
AU - Fujisaki, Yoshihide
AU - Fukagawa, Hirohiko
AU - Suzuki, Mitsunori
AU - Motomura, Genichi
AU - Sato, Hiroto
AU - Tokito, Shizuo
AU - Fujikake, Hideo
PY - 2011/2
Y1 - 2011/2
N2 - A new driving scheme for an active-matrix organic light emitting diode (AMOLED) display was developed to prevent the picture quality degradation caused by the hysteresis characteristics of organic thin film transistors (OTFTs). In this driving scheme, the gate electrode voltage of a driving- OTFT is directly controlled through the storage capacitor so that the operating point for the driving-OTFT is on the same hysteresis curve for every pixel after signal data are stored in the storage capacitor. Although the number of OTFTs in each pixel for the AMOLED display is restricted because OTFT size should be large enough to drive organic light emitting diodes (OLEDs) due to their small carrier mobility, it can improve the picture quality for an OTFT-driven flexible OLED display with the basic two transistor-one capacitor circuitry.
AB - A new driving scheme for an active-matrix organic light emitting diode (AMOLED) display was developed to prevent the picture quality degradation caused by the hysteresis characteristics of organic thin film transistors (OTFTs). In this driving scheme, the gate electrode voltage of a driving- OTFT is directly controlled through the storage capacitor so that the operating point for the driving-OTFT is on the same hysteresis curve for every pixel after signal data are stored in the storage capacitor. Although the number of OTFTs in each pixel for the AMOLED display is restricted because OTFT size should be large enough to drive organic light emitting diodes (OLEDs) due to their small carrier mobility, it can improve the picture quality for an OTFT-driven flexible OLED display with the basic two transistor-one capacitor circuitry.
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U2 - 10.1143/JJAP.50.024201
DO - 10.1143/JJAP.50.024201
M3 - Article
AN - SCOPUS:79951909451
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2
M1 - 024201
ER -