New fabrication technology of fin field effect transistors using neutral-beam etching

Kazuhiko Endo; Shuichi Noda; Takuya Ozaki; Seiji Samukawa; Meishoku Masahara; Yongxun Liu; Kenichi Ishii; Hidenori Takashima; Etsuro Sugimata; Takashi Matsukawa; Hiromi Yamauchi; Yuki Ishikawa; Eiichi Suzuki

doi:10.1143/JJAP.45.5513

New fabrication technology of fin field effect transistors using neutral-beam etching

Kazuhiko Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Hiromi Yamauchi, Yuki Ishikawa, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Contribution to journal › Review article › peer-review

4 Citations (Scopus)

Abstract

Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO₂ hard mask under low-energy NBE conditions.

Original language	English
Pages (from-to)	5513-5516
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	6 B
DOIs	https://doi.org/10.1143/JJAP.45.5513
Publication status	Published - 2006 Jun 20

Keywords

Damage
Double gate
Neutral-beam
Ultrathin channel

Access to Document

10.1143/JJAP.45.5513

Cite this

@article{45845965b3144c26a5a5791b5acce61f,

title = "New fabrication technology of fin field effect transistors using neutral-beam etching",

abstract = "Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.",

keywords = "Damage, Double gate, Neutral-beam, Ultrathin channel",

author = "Kazuhiko Endo and Shuichi Noda and Takuya Ozaki and Seiji Samukawa and Meishoku Masahara and Yongxun Liu and Kenichi Ishii and Hidenori Takashima and Etsuro Sugimata and Takashi Matsukawa and Hiromi Yamauchi and Yuki Ishikawa and Eiichi Suzuki",

year = "2006",

month = jun,

day = "20",

doi = "10.1143/JJAP.45.5513",

language = "English",

volume = "45",

pages = "5513--5516",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - New fabrication technology of fin field effect transistors using neutral-beam etching

AU - Endo, Kazuhiko

AU - Noda, Shuichi

AU - Ozaki, Takuya

AU - Samukawa, Seiji

AU - Masahara, Meishoku

AU - Liu, Yongxun

AU - Ishii, Kenichi

AU - Takashima, Hidenori

AU - Sugimata, Etsuro

AU - Matsukawa, Takashi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Suzuki, Eiichi

PY - 2006/6/20

Y1 - 2006/6/20

N2 - Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.

AB - Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.

KW - Damage

KW - Double gate

KW - Neutral-beam

KW - Ultrathin channel

UR - http://www.scopus.com/inward/record.url?scp=33745641317&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745641317&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.5513

DO - 10.1143/JJAP.45.5513

M3 - Review article

AN - SCOPUS:33745641317

SN - 0021-4922

VL - 45

SP - 5513

EP - 5516

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 B

ER -

New fabrication technology of fin field effect transistors using neutral-beam etching

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this