New III-V diluted magnetic semiconductors (invited)

H. Ohno, H. Munekata, S. Von Molnár, L. L. Chang

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151 Citations (Scopus)


A new class of diluted magnetic semiconductor (DMS) based on a III-V semiconductor is reviewed. The new DMS, (In,Mn)As, was made possible by low temperature molecular beam epitaxial growth. Magnetic measurements and x-ray diffraction showed homogeneous incorporation of Mn in the films under certain growth conditions, and inclusion of a MnAs-like phase if the conditions are not optimized. The films can be made either p- or n-type by choosing the growth conditions and/or doping. Homogeneous n-type (In,Mn)As layers were paramagnetic and showed negative magnetoresistance. On the other hand, remanent magnetization was observed in p-type samples at low temperature and an anomalous Hall effect associated with it. The presence of such effects was most readily explained in terms of formation of bound magnetic polarons. A first result of anomalous Hall effect in a heterojunction is also presented.

Original languageEnglish
Pages (from-to)6103-6108
Number of pages6
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 1991


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