New magnetic nanodot memory with FePt nanodots

Cheng Kuan Yin, Mariappan Murugesan, Ji Chel Bea, Mikihiko Oogane, Takafumi Fukushima, Tetsu Tanaka, Shozo Kono, Seiji Samukawa, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


A new magnetic nanodot (MND) memory with FePt nanodots was proposed. The FePt nanodots dispersed in SiO2 insulating film was successfully fabricated by self-assembled nanodot deposition (SAND). The size of the FePt nanodot can be controlled by SAND with a different target area ratio of the FePt pellets area in the SiO2 target. Thermal annealing converts the magnetic properties of the FePt nanodots from antiferromagnetic into high coercivity ferromagnetic without thermal agglomeration. An L10 face-centered tetragonal (fct) FePt MND film was successfully formed which acted as a charge retention layer. Furthermore, the fundamental characteristics of the MND memory were investigated using magnetic metal oxide semiconductor (MOS) capacitor devices.

Original languageEnglish
Pages (from-to)2167-2171
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2007 Apr 24


  • Annealing
  • FePt
  • Flash memory
  • Magnetic
  • Nanodot
  • Nonvolatile memory


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