New MBE growth method for InSb quantum well boxes

Nobuyuki Koguchi; Satoshi Takahashi; Toyohiro Chikyow

doi:10.1016/0022-0248(91)91064-H

New MBE growth method for InSb quantum well boxes

Nobuyuki Koguchi, Satoshi Takahashi, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

279 Citations (Scopus)

Abstract

We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm × 200 nm × 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.

Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91064-H
Publication status	Published - 1991 May 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(91)91064-H

Cite this

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title = "New MBE growth method for InSb quantum well boxes",

abstract = "We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm × 200 nm × 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.",

author = "Nobuyuki Koguchi and Satoshi Takahashi and Toyohiro Chikyow",

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AU - Takahashi, Satoshi

AU - Chikyow, Toyohiro

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Y1 - 1991/5/2

N2 - We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm × 200 nm × 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.

AB - We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm × 200 nm × 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.

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New MBE growth method for InSb quantum well boxes

Abstract

ASJC Scopus subject areas

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