TY - GEN
T1 - New measurement concept of nanometer-level defects on Si wafer surface by using micro contact sensor
AU - Lu, Wenjian
AU - Yuki, Shimizu
AU - Wei, Gao
PY - 2012
Y1 - 2012
N2 - A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.
AB - A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.
KW - Contact sensor
KW - Frictional heat
KW - Heat transfer
KW - Wafer inspection
UR - http://www.scopus.com/inward/record.url?scp=84860120025&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860120025&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.497.137
DO - 10.4028/www.scientific.net/AMR.497.137
M3 - Conference contribution
AN - SCOPUS:84860120025
SN - 9783037853962
T3 - Advanced Materials Research
SP - 137
EP - 141
BT - Ultra-Precision Machining Technologies
T2 - 8th CHINA-JAPAN International Conference on Ultra-Precision Machining, CJUPM 2011
Y2 - 20 November 2011 through 22 November 2011
ER -