Gas flow control is important factor that influences the concentration of process gas and the pressure of the process chamber. In manufacturing processes that use metal organic (MO) gases, a system that controls the flow rate of MO gas must be developed to improve film performance and the reliability of film formation. We have developed a high temperature flow control system based on pressure measurements (HT-FCS) to control the flow rate of MO gas. Moreover, a liquid source control system that combines a HT-FCS and vaporizer was developed. Using this system, it was possible to control the flow rate of MO gas with high accuracy for extended periods. A flow control system that can supply MO gas with a stable flow rate by vaporizing MO material with the quantity needed at each time has been realized.
|Title of host publication
|Dielectrics for Nanosystems 5
|Subtitle of host publication
|Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
|Electrochemical Society Inc.
|Number of pages
|Published - 2012
|5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 6 → 2012 May 10
|5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
|12/5/6 → 12/5/10