TY - JOUR
T1 - New model for low-temperature oxidation of copper single crystal
AU - Fujita, Kensuke
AU - Ando, Daisuke
AU - Uchikoshi, Masahito
AU - Mimura, Kouji
AU - Isshiki, Minoru
PY - 2013/7/1
Y1 - 2013/7/1
N2 - Low-temperature oxidation of a copper single crystal, Cu(1 1 1), was investigated using an in situ spectroscopic ellipsometer. The oxidation rate followed the cubic rate law at 5-25 nm oxide thickness; thus, the rate law of Cu single crystal oxidation depended on Cu oxide thickness. Furthermore, the activation energy was found to be close to that of grain boundary diffusion of metal ions in the oxide layer. These results could be explained by grain boundary diffusion and oxide grain growth. Thus, we verified that the low-temperature oxidation kinetics of copper depend on oxide grain growth.
AB - Low-temperature oxidation of a copper single crystal, Cu(1 1 1), was investigated using an in situ spectroscopic ellipsometer. The oxidation rate followed the cubic rate law at 5-25 nm oxide thickness; thus, the rate law of Cu single crystal oxidation depended on Cu oxide thickness. Furthermore, the activation energy was found to be close to that of grain boundary diffusion of metal ions in the oxide layer. These results could be explained by grain boundary diffusion and oxide grain growth. Thus, we verified that the low-temperature oxidation kinetics of copper depend on oxide grain growth.
KW - Copper
KW - Ellipsometry
KW - Grain growth
KW - Low-temperature oxidation
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U2 - 10.1016/j.apsusc.2013.03.096
DO - 10.1016/j.apsusc.2013.03.096
M3 - Article
AN - SCOPUS:84877578336
SN - 0169-4332
VL - 276
SP - 347
EP - 358
JO - Applied Surface Science
JF - Applied Surface Science
ER -