New multichip-to-wafer 3D integration technology using Self-Assembly and Cu nano-pillar hybrid bonding

M. Koyanagi, K. W. Lee, T. Fukushima, T. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called SAE (Self-Assembly and Electrostatic) carrier and electrostatically bonded by applying a voltage to bipolar electrodes on the SAE carrier. The self-assembled dies on the carrier are simultaneously transferred to another wafer or interposer wafer by electrostatically debonding the carrier wafer after Cu nano-pillar hybrid bonding of self-assembled dies.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages338-341
Number of pages4
ISBN (Electronic)9781467397179
DOIs
Publication statusPublished - 2016
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 2016 Oct 252016 Oct 28

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/TerritoryChina
CityHangzhou
Period16/10/2516/10/28

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