TY - GEN
T1 - New NBTI lifetime prediction method for ultra thin siO2 films
AU - Watanabe, K.
AU - Kuroda, R.
AU - Teramoto, A.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2006
Y1 - 2006
N2 - An accurate NBTI evaluation method is developed and the degradation mechanism caused by the NBT stress is also discussed. The impact of the carrier distribution and energy in the inversion layer to the NBTI degradation is clarified using the device simulator and theoretical calculation. The device simulation and theoretical calculation results depict that an excess stress such as a high voltage and temperature excites some holes to high energy levels. A presence of those high energy holes (warm holes) makes the accurate NBTI lifetime prediction difficult. On the other hand, the developed model can easily evaluate the NBTI degradation because it does not excite any warm hole. Finally, the NBTI lifetime prediction using the developed model is demonstrated.
AB - An accurate NBTI evaluation method is developed and the degradation mechanism caused by the NBT stress is also discussed. The impact of the carrier distribution and energy in the inversion layer to the NBTI degradation is clarified using the device simulator and theoretical calculation. The device simulation and theoretical calculation results depict that an excess stress such as a high voltage and temperature excites some holes to high energy levels. A presence of those high energy holes (warm holes) makes the accurate NBTI lifetime prediction difficult. On the other hand, the developed model can easily evaluate the NBTI degradation because it does not excite any warm hole. Finally, the NBTI lifetime prediction using the developed model is demonstrated.
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M3 - Conference contribution
AN - SCOPUS:32844463291
T3 - ECS Transactions
SP - 147
EP - 160
BT - Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
PB - Electrochemical Society Inc.
T2 - 5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Y2 - 16 October 2005 through 20 October 2005
ER -